High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate
Iwamoto, Naoya, Azarov, Alexander, Ohshima, Takeshi, Moe, Anne Marie M., Svensson, Bengt G.Volume:
118
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4927040
Date:
July, 2015
File:
PDF, 1.61 MB
english, 2015