Low temperature homoepitaxy of GaN structures by Vapor...

Journal of Crystal Growth 2017 / 06 Vol. 467

Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport

Jaud, Alexandre, Auvray, Laurent, Kahouli, Abdelkarim, Abi-Tannous, Tony, Linas, Sébastien, Ferro, Gabriel, Brylinski, Christian
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Volume:
467
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2017.03.018
Date:
June, 2017
File:
PDF, 3.02 MB
english, 2017
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