Spin-dependent tunneling recombination in heterostructures...

Semiconductors 2017 / 1 Vol. 51; Iss. 1

Spin-dependent tunneling recombination in heterostructures with a magnetic layer

Denisov, K. S., Rozhansky, I. V., Averkiev, N. S., Lähderanta, E.
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Volume:
51
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782617010067
Date:
January, 2017
File:
PDF, 314 KB
english, 2017
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