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DLTS characterization of defects in GaN induced by electron beam exposure
Ngoepe, P.N.M., Meyer, W.E., Auret, F.D., Omotoso, E., Diale, M.Volume:
64
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2017.03.008
Date:
June, 2017
File:
PDF, 273 KB
english, 2017