Measurement of process-induced defects in Si sub-micron...

The European Physical Journal Applied Physics 2004 / 07 Vol. 27; Iss. 1-3

Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM

Umeda, T., Toda, A., Mochizuki, Y.
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Volume:
27
Language:
english
Journal:
The European Physical Journal Applied Physics
DOI:
10.1051/epjap:2004123
Date:
July, 2004
File:
PDF, 739 KB
english, 2004
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