Analysis of reaction between c+a and -c+a dislocations in...

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

Sugawara, Yoshihiro, Ishikawa, Yukari, Watanabe, Arata, Miyoshi, Makoto, Egawa, Takashi
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Volume:
6
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4948451
Date:
April, 2016
File:
PDF, 3.86 MB
english, 2016
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