AlN/GaN heterostructures for normally-off transistors

Semiconductors 2017 / 3 Vol. 51; Iss. 3

AlN/GaN heterostructures for normally-off transistors

Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Tereshenko, O. E., Abgaryan, K. K., Reviznikov, D. L., Zemlyakov, V. E., Egorkin, V. I., Parnes, Ya. M., Tikhomirov, V. G., Prosvirin, I. P.
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Volume:
51
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782617030277
Date:
March, 2017
File:
PDF, 598 KB
english, 2017
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