Effect of indium low doping in ZnO based TFTs on electrical...

AIP Advances 2015 / 11 Vol. 5; Iss. 11

Effect of indium low doping in ZnO based TFTs on electrical parameters and bias stress stability

Cheremisin, Alexander B., Kuznetsov, Sergey N., Stefanovich, Genrikh B.
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Volume:
5
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4935789
Date:
November, 2015
File:
PDF, 1.18 MB
english, 2015
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