Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
Wada, Akira, Endo, Kazuhiko, Masahara, Meishoku, Huang, Chi-Hsien, Samukawa, SeijiVolume:
3
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.3.096502
Date:
September, 2010
File:
PDF, 1.27 MB
english, 2010