Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers
Akhmetov, V. D., Richter, H., Seifert, W., Lysytskiy, O., Wahlich, R., Müller, T., Reiche, M.Volume:
27
Language:
english
Journal:
The European Physical Journal Applied Physics
DOI:
10.1051/epjap:2004084
Date:
July, 2004
File:
PDF, 475 KB
english, 2004