Fabrication and characterization of Pt/Al 2...

Applied Physics Letters 2017 / 01 Vol. 110; Iss. 4

Fabrication and characterization of Pt/Al 2 O 3 /Y 2 O 3 /In 0.53 Ga 0.47 As MOSFETs with low interface trap density

Kim, Seong Kwang, Geum, Dae-Myeong, Shim, Jae-Phil, Kim, Chang Zoo, Kim, Hyung-jun, Song, Jin Dong, Choi, Won Jun, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Sanghyeon, Kim, Dong Myong
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Volume:
110
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4974893
Date:
January, 2017
File:
PDF, 961 KB
english, 2017
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