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[IEEE 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2016.6.23-2016.6.24)] 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Magnetoresistance effect of Ga-Sn-O thin-film device
Fukawa, Asuka, Imanishi, Kota, Miyamura, Shogo, Matsuda, Tokiyoshi, Kimura, MutsumiYear:
2016
Language:
english
DOI:
10.1109/imfedk.2016.7521685
File:
PDF, 383 KB
english, 2016