Enhancement of Auger recombination induced by carrier...

Physical Review B 2017 / 3 Vol. 95; Iss. 12

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Shahmohammadi, M., Liu, W., Rossbach, G., Lahourcade, L., Dussaigne, A., Bougerol, C., Butté, R., Grandjean, N., Deveaud, B., Jacopin, G.
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Volume:
95
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.95.125314
Date:
March, 2017
File:
PDF, 2.90 MB
english, 2017
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