Erratum to Advances on Doping Strategies for Triple-Gate...

Materials Science in Semiconductor Processing 2017 / 06 Vol. 63

Erratum to Advances on Doping Strategies for Triple-Gate FinFETs and Lateral Gate-All-Around Nanowire FETs and Their Impact on Device Performance [MATSCI 62 (2017) 2–12]

Veloso, A., Keersgieter, A. De, Matagne, P., Horiguchi, N., Collaert, N.
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Volume:
63
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2017.03.013
Date:
June, 2017
File:
PDF, 176 KB
english, 2017
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