On the laser lift-off of lightly doped...

Semiconductors 2017 / 1 Vol. 51; Iss. 1

On the laser lift-off of lightly doped micrometer-thickn-GaN films from substrates via the absorption of IR radiation in sapphire

Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., Gorbunov, R. I., Latishev, F. E., Bochkareva, N. I., Lelikov, Y. S., Tarkhin, D. V., Smirnov, A. N.,
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Volume:
51
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782617010249
Date:
January, 2017
File:
PDF, 3.99 MB
english, 2017
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