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Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors
Liu, Yan, Lin, Zhao-Jun, Yang, Ming, Luan, Chong-Biao, Wang, Yu-Tang, Lv, Yuan-Jie, Feng, Zhi-HongVolume:
30
Language:
english
Journal:
Modern Physics Letters B
DOI:
10.1142/S021798491650411X
Date:
December, 2016
File:
PDF, 1.52 MB
english, 2016