Recent advances in preparation, properties and device applications of two-dimensional h-BN and its vertical heterostructures
Yang, Huihui, Gao, Feng, Dai, Mingjin, Jia, Dechang, Zhou, Yu, Hu, PinganVolume:
38
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/38/3/031004
Date:
March, 2017
File:
PDF, 23.08 MB
english, 2017