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Forming-free resistive switching characteristics of Ag/CeO 2 /Pt devices with a large memory window
Zheng, Hong, Kim, Hyung Jun, Yang, Paul, Park, Jong-Sung, Kim, Dong Wook, Lee, Hyun Ho, Kang, Chi Jung, Yoon, Tae-SikVolume:
32
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aa6379
Date:
May, 2017
File:
PDF, 1.94 MB
english, 2017