![](/img/cover-not-exists.png)
f T = 260 GHz and f max = 607 GHz of 100-nm-gate In 0.52 Al 0.48 As/In 0.7 Ga 0.3 As HEMTs with G m.max = 1441 mS/mm
Wang, Qing, Ding, Peng, Su, Yongbo, Ding, Wuchang, Asif, Muhammad, Tang, Wu, Jin, ZhiVolume:
37
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/37/7/074003
Date:
July, 2016
File:
PDF, 2.64 MB
english, 2016