[IEEE 2017 30th International Conference on VLSI Design and 2017 16th International Conference on Embedded Systems (VLSID) - Hyderabad, India (2017.1.7-2017.1.11)] 2017 30th International Conference on VLSI Design and 2017 16th International Conference on Embedded Systems (VLSID) - Characterization of a Novel 10T Low-Voltage SRAM Cell with High Read and Write Margin for 20nm FinFET Technology

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