Theoretical investigation of GaAsBi/GaAsN tunneling...

Superlattices and Microstructures 2017 / 06 Vol. 106

Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction

Wang, Yibo, Liu, Yan, Han, Genquan, Wang, Hongjuan, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue
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Volume:
106
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2017.03.048
Date:
June, 2017
File:
PDF, 787 KB
english, 2017
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