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Nitride Semiconductors (Handbook on Materials and Devices) || Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation, and Interaction Mechanisms

Ruterana, Pierre, Albrecht, Martin, Neugebauer, Jörg
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Volume:
10.1002/35
Year:
2003
Language:
english
DOI:
10.1002/3527607641.ch8
File:
PDF, 2.13 MB
english, 2003
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