Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2017 / 03 Vol. 35; Iss. 2
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Modification of Schottky barrier properties of Al/p-type Si Schottky rectifiers with graphene-oxide-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) interlayer
Janardhanam, Vallivedu, Jyothi, Inapagundla, Yuk, Shim-Hoon, Choi, Chel-Jong, Yun, Hyung-Joong, Won, Jonghan, Hong, Won-Gi, Lee, Sung-Nam, Rajagopal Reddy, VarraVolume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4978511
Date:
March, 2017
File:
PDF, 1.04 MB
english, 2017