Electrical and frequency-dependent properties of Au/Sm 2 O 3 /n-GaN MIS junction with a high-k rare-earth Sm 2 O 3 as interlayer
Manjunath, V., Rajagopal Reddy, V., Sekhar Reddy, P.R., Janardhanam, V., Choi, Chel-JongVolume:
17
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2017.03.023
Date:
July, 2017
File:
PDF, 2.87 MB
english, 2017