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Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer
Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Liu, Wei, Li, Xiang, Liu, Shuangtao, Xing, Yao, Zhang, Liqun, Yang, Hui, Long, Heng, Li, MoVolume:
467
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2017.03.009
Date:
June, 2017
File:
PDF, 831 KB
english, 2017