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AIP Conference Proceedings [AIP PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors - Seoul, (Korea) (25–30 July 2010)] - High-Side nLDMOS Design for Ensuring Over-100 V Breakdown Voltages
Sung, Kunsik, Won, Taeyoung, Ihm, Jisoon, Cheong, HyeonsikYear:
2011
Language:
english
DOI:
10.1063/1.3666685
File:
PDF, 235 KB
english, 2011