Characterization of Defects in AlGaN/GaN HEMTs Based on...

IEEE Transactions on Electron Devices 2017 / 5 Vol. 64; Iss. 5

Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy

Benvegnu, Agostino, Laurent, Sylvain, Jardel, Olivier, Muraro, Jean-Luc, Meneghini, Matteo, Barataud, Denis, Meneghesso, Gaudenzio, Zanoni, Enrico, Quere, Raymond
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2682112
Date:
May, 2017
File:
PDF, 3.19 MB
english, 2017
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