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Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing
Jiang, S.S., He, G., Liang, S., Zhu, L., Li, W.D., Zheng, C.Y., Lv, J.G., Liu, M.Volume:
704
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2017.02.051
Date:
May, 2017
File:
PDF, 3.22 MB
english, 2017