Impacts of thermal stress and doping on intrinsic point...

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Journal of Crystal Growth 2016 / 12

Impacts of thermal stress and doping on intrinsic point defect properties and clustering during single crystal silicon and germanium growth from a melt

Vanhellemont, Jan, Kamiyama, Eiji, Nakamura, Kozo, Śpiewak, Piotr, Sueoka, Koji
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Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2016.12.077
Date:
December, 2016
File:
PDF, 1.01 MB
english, 2016
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