Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors
Um, Jae Gwang, Mativenga, Mallory, Migliorato, Piero, Jang, JinVolume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4922714
Date:
June, 2015
File:
PDF, 1.81 MB
english, 2015