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A comparison between HfO 2 /Al 2 O 3 nano-laminates and ternary Hf x Al y O compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
Krylov, Igor, Pokroy, Boaz, Eizenberg, Moshe, Ritter, DanVolume:
120
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4962855
Date:
September, 2016
File:
PDF, 3.87 MB
english, 2016