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Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiN x and SiN x /P catalytic-doped layers
Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke, Matsumura, HidekiVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.02BF09
Date:
February, 2016
File:
PDF, 1.88 MB
english, 2016