A physics-based model of threshold voltage for amorphous...

AIP Advances 2016 / 03 Vol. 6; Iss. 3

A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors

Chen, Chi-Le, Chen, Wei-Feng, Zhou, Lei, Wu, Wei-Jing, Xu, Miao, Wang, Lei, Peng, Jun-Biao
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Volume:
6
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4945410
Date:
March, 2016
File:
PDF, 1.03 MB
english, 2016
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