Resistive switching properties of polycrystalline HfO...

Japanese Journal of Applied Physics 2017 / 05 Vol. 56; Iss. 5

Resistive switching properties of polycrystalline HfO x N y films by plasma-enhanced atomic layer deposition

Yu, Jue, Huang, Wei, Lu, Chao, Lin, Guangyang, Li, Cheng, Chen, Songyan, Wang, Jianyuan, Xu, Jianfang, Liu, Chunli, Lai, Hongkai
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.050304
Date:
May, 2017
File:
PDF, 1.34 MB
english, 2017
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