Electroluminescence property improvement by adjusting...

AIP Advances 2017 / 03 Vol. 7; Iss. 3

Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes

Chen, P., Zhao, D. G., Jiang, D. S., Long, H., Li, M., Yang, J., Zhu, J. J., Liu, Z. S., Li, X. J., Liu, W., Li, X., Liang, F., Liu, J. P., Zhang, B. S., Yang, H.
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Volume:
7
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4978215
Date:
March, 2017
File:
PDF, 5.26 MB
english, 2017
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