Influence of Be doping placement in InAs/GaSb...

Semiconductor Science and Technology 2017 / 05 Vol. 32; Iss. 5

Influence of Be doping placement in InAs/GaSb superlattice-based absorber on the performance of MWIR photodiodes

Czuba, K, Sankowska, I, Jureńczyk, J, Jasik, A, Papis-Polakowska, E, Kaniewski, J
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Volume:
32
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aa62c0
Date:
May, 2017
File:
PDF, 1.43 MB
english, 2017
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