Increase in the growth rate of GaN crystals by using...

Japanese Journal of Applied Physics 2017 / 05 Vol. 56; Iss. 5

Increase in the growth rate of GaN crystals by using gaseous methane in the Na flux method

Murakami, Kosuke, Ogawa, Shogo, Imanishi, Masayuki, Imade, Mamoru, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.055502
Date:
May, 2017
File:
PDF, 667 KB
english, 2017
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