Design of Temperature-Aware Low-Voltage 8T SRAM in SOI...

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IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2017

Design of Temperature-Aware Low-Voltage 8T SRAM in SOI Technology for High-Temperature Operation (25 °C-300 °C)

Le Ba, Ngoc, Kim, Tony Tae-Hyoung
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Year:
2017
Language:
english
Journal:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
DOI:
10.1109/TVLSI.2017.2686600
File:
PDF, 1.89 MB
english, 2017
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