Study of the structural and optical properties of GaP(N)...

Semiconductors 2017 / 2 Vol. 51; Iss. 2

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

Kryzhanovskaya, N. V., Polubavkina, Yu. S., Nevedomskiy, V. N., Nikitina, E. V., Lazarenko, A. A., Egorov, A. Yu., Maximov, M. V., Moiseev, E. I., Zhukov, A. E.
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Volume:
51
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782617020087
Date:
February, 2017
File:
PDF, 373 KB
english, 2017
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