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Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping
Aleshin, A. N., Bugaev, A. S., Ermakova, M. A., Ruban, O. A.Volume:
61
Language:
english
Journal:
Crystallography Reports
DOI:
10.1134/S1063774516020036
Date:
March, 2016
File:
PDF, 668 KB
english, 2016