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On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H 2 etching process
Kim, Hyunwoo, Lee, Hunhee, Kim, Young Seok, Lee, Suhyeong, Kang, Hongjeon, Heo, Jaeyeong, Kim, Hyeong JoonVolume:
19
Year:
2017
Language:
english
Journal:
CrystEngComm
DOI:
10.1039/C7CE00479F
File:
PDF, 5.19 MB
english, 2017