AIP Conference Proceedings [AIP PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors - Rio de Janeiro (Brazil) (27 July–1 August 2009)] - The electron Landé g factor in GaAs-(Ga, Al)As coupled quantum wells
Porras-Montenegro, N., Darío Perea, J., Mejía-Salazar, J. R., Caldas, Marília, Studart, NelsonYear:
2010
Language:
english
DOI:
10.1063/1.3295395
File:
PDF, 104 KB
english, 2010