Suppression of gate leakage current in...

Journal of Applied Physics 2017 / 03 Vol. 121; Iss. 11

Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields

Kotani, Junji, Yamada, Atsushi, Ishiguro, Tetsuro, Yamaguchi, Hideshi, Nakamura, Norikazu
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Volume:
121
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4978424
Date:
March, 2017
File:
PDF, 1.65 MB
english, 2017
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