Improved electrical properties of atomic layer deposited...

AIP Advances 2017 / 02 Vol. 7; Iss. 2

Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

Lee, Juhyun, Lee, Jeongsu, Ham, Giyul, Shin, Seokyoon, Park, Joohyun, Choi, Hyeongsu, Lee, Seungjin, Kim, Juyoung, Sul, Onejae, Lee, Seungbeck, Jeon, Hyeongtag
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Volume:
7
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4977887
Date:
February, 2017
File:
PDF, 4.39 MB
english, 2017
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