![](/img/cover-not-exists.png)
Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer
Lee, Juhyun, Lee, Jeongsu, Ham, Giyul, Shin, Seokyoon, Park, Joohyun, Choi, Hyeongsu, Lee, Seungjin, Kim, Juyoung, Sul, Onejae, Lee, Seungbeck, Jeon, HyeongtagVolume:
7
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4977887
Date:
February, 2017
File:
PDF, 4.39 MB
english, 2017