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22 nm In${}_{0.75}{{\rm{Ga}}}_{0.25}$As channel-based HEMTs on InP/GaAs substrates for future THz applications
Ajayan, J., Nirmal, D.Volume:
38
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/38/4/044001
Date:
April, 2017
File:
PDF, 1.85 MB
english, 2017