Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma
Li, Yan-Lin, Chang-Liao, Kuei-Shu, Ku, Chao-Chen, Ruan, Dun-Bao, Huang, Chin-Hsiu, Hsu, Yi-Wen, Tsai, Shang-Fu, Yang, Meng-Ying, Wu, Wen-FaVolume:
178
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2017.04.007
Date:
June, 2017
File:
PDF, 2.33 MB
english, 2017