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An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
Christian C. Enz, François Krummenacher, Eric A. VittozVolume:
8
Language:
english
Pages:
32
DOI:
10.1007/bf01239381
Date:
July, 1995
File:
PDF, 2.04 MB
english, 1995