A 0.4 V 12T 2RW dual-port SRAM with suppressed...

Microelectronics Journal 2017 / 4

A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbance

Wang, Bo, Zhou, Jun, Tae-Hyoung Kim, Tony
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Language:
english
Journal:
Microelectronics Journal
DOI:
10.1016/j.mejo.2017.01.003
Date:
April, 2017
File:
PDF, 1.23 MB
english, 2017
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