Electronic structure and insulating gap in epitaxial VO...

APL Materials 2015 / 12 Vol. 3; Iss. 12

Electronic structure and insulating gap in epitaxial VO 2 polymorphs

Lee, Shinbuhm, Meyer, Tricia L., Sohn, Changhee, Lee, Donghwa, Nichols, John, Lee, Dongkyu, Seo, Sung S. Ambrose, Freeland, John W., Noh, Tae Won, Lee, Ho Nyung
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Volume:
3
Language:
english
Journal:
APL Materials
DOI:
10.1063/1.4939004
Date:
December, 2015
File:
PDF, 1.16 MB
english, 2015
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