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[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Extraction of intrinsic and extrinsic parameters of graphene field-effect transistor from its asymmetric I–V characteristic
Satou, Akira, Tamamushi, Gen, Sugawara, Kenta, Mitsushio, Junki, Ryzhii, Victor, Otsuji, TaiichiYear:
2016
Language:
english
DOI:
10.1109/iciprm.2016.7528701
File:
PDF, 18 KB
english, 2016